inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1278 description drain current C i d = 10a@ t c =25 drain source voltage- : v dss =500v(min) fast switching speed applications designed for high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value uni t v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 10 a p tot total dissipation@tc=25 100 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit th j-c thermal resistance,junction to case 1.25 /w th j-a thermal resistance,junction to ambient 35.0 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1278 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 1ma 500 v v gs( th ) gate threshold voltage v ds = 0v; i d =10ma 2.1 3.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =5a 0.8 1.1 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =500v; v gs = 0 500 ua v sd diode forward voltage i f =10a; v gs =0 0.95 1.8 v tr rise time v gs =10v;i d =10a;r l =25 60 90 ns ton turn-on time 85 130 ns tf fall time 90 140 ns toff turn-off time 200 300 ns pdf pdffactory pro www.fineprint.cn
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